Erratum: “Relation between Debye temperature and energy band gap of semiconductors” [AIP Adv. 7, 045109 (2017)]
نویسندگان
چکیده
منابع مشابه
Contents: (Adv. Sci. 7/2017)
Assembly of electrochemically active materials into paper-based electrodes opens up new opportunities for flexible energy storage devices. Yat Li and co-workers review the recent advances in the synthesis of paper-based electrodes, including paper-supported electrodes and paper-like electrodes in article 1700107. Their structural features, electrochemical performances and implementation as elec...
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A simple relation between the optical electronegativity, energy gap, refractive index and electronic polarizability is given for ternary chalcopyrite semiconductors. Energy gap has been evaluated from the optical electronegativity whereas refractive index and electronic polarizability values have been evaluated from the energy gap by proposing a linear relation between them. The calculated valu...
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Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors
A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.5007149